A 5 GHz high efficiency and low distortion InGaP/GaAs HBT power amplifier MMIC

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2003, Pages 871-874

  Fujita, K ^a   Shirakawa, K ^a   Takahashi, N ^a   Liu, Y ^a   Oka, T ^a   Yamashita, M ^a   Sakuno, K ^a   Kawamura, H ^a   Hasegawa, M ^a   Koh, H ^a   Kagoshima, K ^a   Kijima, H ^a   Sato, H ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ETCHING; HETEROJUNCTION BIPOLAR TRANSISTORS; POWER AMPLIFIERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

ERROR VECTOR MAGNITUDE (EVM);

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0042093533     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. W. P. Dumke et al, "GaAs-GaAIAs Heterojunction Transistor for High Frequency Operation", Solid-State Electronics, vol. 15, pp.1339-1343, 1972.
2. W. Liu et al, "Laterally Etched Undercut (LEU) Technique to Reduce Base-Collector Capacitances in Heterojunction Bipolar Transistors", 1995 IEEE GaAs IC Symp. Dig., pp. 167-170, 1995.
3. H. Koh et al, "A High Efficiency InGaP/GaAs HBT Power Amplifier MMIC for the 5GHz Wireless-LAN Application", Proc. EuMC 2002, pp.469-472, 2002.