Silicon doping of InP using modified flow rate modulation epitaxy

Thin Solid Films

Volumn 288, Issue 1-2, 1996, Pages 147-149

  Hu, C C ^a   Lin, M H ^a   Lee, M K ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

InP; Metal organic chemical vapour deposition; Silicon doping

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON;

FLOW RATE MODULATION EPITAXY; PHOSPHINE; SILICON DOPING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0042093400     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08816-5     Document Type: Article

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