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Volumn 3, Issue , 2003, Pages 1781-1784

Low-loss bandpass RF filter using MEMS capacitance switches to achieve a one-octave tuning range and independently variable bandwidth

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC INDUCTORS; MICROELECTROMECHANICAL DEVICES; PRINTED CIRCUIT BOARDS; SWITCHES; TUNING;

EID: 0042090836     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (54)

References (6)
  • 2
    • 0035449791 scopus 로고    scopus 로고
    • RF MEMS-based tunable filters
    • Sept.
    • C. Goldsmith, "RF MEMS Devices and Circuits for Radar and Receiver Applications",' 2000 IEEE MTT-s International Microwave Symposium Workshop Notes, Microwave and Photonic Applications of MEMS, WFD003. see also L J. Brank et al., "RF MEMS-Based Tunable Filters," Int. J. of RF and Microwave CAE, 276-284, Sept. 2001.
    • (2001) Int. J. of RF and Microwave CAE , pp. 276-284
    • Brank, L.J.1
  • 3
    • 0035689784 scopus 로고    scopus 로고
    • Tunable lumped components with applications to reconfigurable MEMS filters
    • D. Peroulis, S. Pacheco, K. Sarabandi, and L.P. Katehi, "Tunable Lumped Components with Applications to Reconfigurable MEMS Filters," 2001 IEEE MTT-S Digest, TU4C-6, pp.341-344.
    • 2001 IEEE MTT-S Digest , vol.TU4C-6 , pp. 341-344
    • Peroulis, D.1    Pacheco, S.2    Sarabandi, K.3    Katehi, L.P.4
  • 5
    • 34247495690 scopus 로고
    • A resonant gate silicon surface transistor with high Q bandpass properties
    • H.C. Nathanson et al., "A Resonant Gate Silicon Surface Transistor with High Q Bandpass Properties," Appl. Phys. Lett. 7(4) (1965). See also ibid, IEEE Trans. Electron Devices, ED-14, 117-133 (1967).
    • (1965) Appl. Phys. Lett. , vol.7 , Issue.4
    • Nathanson, H.C.1
  • 6
    • 84925175290 scopus 로고
    • ibid
    • H.C. Nathanson et al., "A Resonant Gate Silicon Surface Transistor with High Q Bandpass Properties," Appl. Phys. Lett. 7(4) (1965). See also ibid, IEEE Trans. Electron Devices, ED-14, 117-133 (1967).
    • (1967) IEEE Trans. Electron Devices , vol.ED-14 , pp. 117-133


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.