Electronic properties of transition-metal-atom doped Si cage clusters

European Physical Journal D

Volumn 24, Issue 1-3, 2003, Pages 241-244

  Miyazaki, T ^a   Hiura, H ^a   Kanayama, T ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; TRANSITION METALS;

CRYSTAL SURFACES; DENSITY-FUNCTIONAL STUDY; ELECTRON ORBITAL; ELECTRONIC.STRUCTURE; POTENTIAL ABILITY; SI CLUSTERS; SI CRYSTALS; TRANSITION METAL ATOMS;

ELECTRONIC PROPERTIES;

EID: 0042071556     PISSN: 14346060     EISSN: None     Source Type: Journal    
DOI: 10.1140/epjd/e2003-00121-x     Document Type: Conference Paper

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