Implant dose dependence in doping Si atoms from a-Si:H films into S+-implanted GaAs

Journal of Applied Physics

Volumn 86, Issue 12, 1999, Pages 6697-6700

  Yokota, Katsuhiro ^a   Nakamura, Kazuhiro ^a   Ishizu, Tomoyuki ^a   Sakaguchi, Masanori ^a   Takano, Hiromichi ^b   Kumagai, Masao ^b  

^a KANSAI UNIVERSITY   (Japan)

^b Kanagawa High Technology Foundation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042046219     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371746     Document Type: Article

References (11)

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