Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers

Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 230-236

  Kirscht, F G ^a   Furukawa, Y ^b   Seifert, W ^c   Schmalz, K ^c   Buczkowski, A ^a   Kim, S B ^a   Abe, H ^b   Koya, H ^b   Bailey, J ^d  

^a Siltec Silicon Corporation   (United States)

^b SUMCO CORPORATION   (Japan)

^c Institute of Semiconductor Physics   (Germany)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Bulk defect; CZ silicon; Oxide integrity; Recombination lifetime

Indexed keywords

EID: 0042037761     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01289-3     Document Type: Article

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