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Volumn 37, Issue 1-3, 1996, Pages 89-92

Theoretical reflectance anisotropy spectroscopy and scanning tunnelling microscopy study of the GaAs(001) (2 × 4) surface

Author keywords

Gallium arsenide; Metalo organic vapour phase epitaxy; Reflectance anisotropy spectroscopy; Scanning tunnelling microscopy; Semiconductor

Indexed keywords


EID: 0042037674     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01461-6     Document Type: Article
Times cited : (1)

References (15)
  • 7
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    • J. Bardeen, Phys. Rev. Lett., 6 (1961) 57. M. Tsukada, K. Kobayashi, N. Isshiki and H. Kageshima, Surf. Sci. Rep., 13 (1991) 265.
    • (1961) Phys. Rev. Lett. , vol.6 , pp. 57
    • Bardeen, J.1
  • 12
    • 33750001641 scopus 로고
    • V. Bressler-Hill, M. Wassermeier, K. Pond, R. Maboudian, G.A.D. Briggs, R.M. Petroff and W.H. Weinberg, J. Vac. Sci. Technol. B, 10 (1992) 1881. T. Hashizume, Q.-K. Xue, A. Ichimiya and T. Sakurai, Phys. Rev. B, 51 (1995) 4200.
    • (1995) Phys. Rev. B , vol.51 , pp. 4200
    • Hashizume, T.1    Xue, Q.-K.2    Ichimiya, A.3    Sakurai, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.