High-incident photon-to-current conversion efficiency by sulfurization of wide-band gap metal oxides

Materials Chemistry and Physics

Volumn 82, Issue 2, 2003, Pages 466-470

  Sirimanne, P M ^a,b   Sakata, T ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Micro crystals of sulfides; Semiconductor sensitization; Sulfurization; Wide band gap metal oxides

Indexed keywords

ELECTRODES; PHOTOCURRENTS; PHOTONS; POLYELECTROLYTES; POLYSULFIDES; REACTION KINETICS; SEMICONDUCTING INDIUM COMPOUNDS; ZINC SULFIDE;

SULFURIZATION;

ZINC OXIDE;

EID: 0042009897     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(03)00273-6     Document Type: Article

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