Study of Electrically Active Lattice Defects in Cf-252 and Proton Irradiated Silicon Diodes

IEEE Transactions on Nuclear Science

Volumn 39, Issue 6, 1992, Pages 1747-1753

  Trauwaert, M A ^a   Vanhellemont, J ^a   Simoen, E ^a   Claeys, C ^a   Johlander, B ^b   Adams, L ^b   Clauws, P ^c  

^a IMEC   (Belgium)

^b EUROPEAN SPACE AGENCY   (Netherlands)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041941732     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.211362     Document Type: Article

References (7)

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2. C. Claeys, E. Simoen, M.-A. Trauwaert and J. Vanhellemont, “Electrical and Physical Characterization of Proton and Cf-252 Bulk Radiation Damage”, 1MEC Report P35271-1M-RP-0017 (1992).
3. L.C. Kimerling and J.L. Benton, “Electrically Controlled Reactions of Interstitial Iron in Silicon”, Physica, vol. 116B, pp. 297–300 (1983).
4. K. Graff and H. Pieper, “The properties of Iron in Silicon”, J. Electrochem.Soc., vol. 128, pp. 669–674 (1981).
5. M.L. Polignano, G.F. Cerefolini, H. Bender and C. Claeys, “Gettering Mechanisms in Silicon”, J. Appl. Phys., vol. 64(2), pp. 869–876 (1988).
6. A.F.W. Willoughby, “Control of Radiation Resistance in Solar Cells”, in Defect Control in Semiconductors, ed. K. Sumino, Elsevier Science Publishers B.V. (North Holland), pp, 107–118 (1990).
7. C.1. Dale, P.W. Marshall, E.A. Burke, G.P. Summers and G.E. Bender, “The generation lifetime damage factor and its variance in silicon”, IEEE Trans.Nucl.Sci., vol. NS-36(6), pp. 1872–1881 (1989).