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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 A, 2003, Pages 3350-3353

Formation and properties of epitaxial CoSi2 layers on p-Si0.83Ge0.17/p-Si(001) using a Si capping layer by metal-organic chemical vapor deposition

(6) Ban, Sang Hyun a Shin, Dong Ok a Ahn, Young Seop a Ahn, Byung Tae b Shim, Kyu Hwan c Lee, Nae Eung a

a Sungkyunkwan University (South Korea)

b Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

c Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

Barrier height; Epitaxial cobalt disilicide; Metal organic chemical vapor deposition; Silicon germanium

Indexed keywords

ANNEALING; COBALT COMPOUNDS; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; GERMANIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS;

COBALT DISILICIDE; CYCLOPENTADIENYL COBALT; SILICON GERMANIUM;

HETEROJUNCTIONS;

EID: 0041880645 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.3350 Document Type: Article

Times cited : (3)

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