Strong solutions for pair diffusion models in homogeneous semiconductors

Nonlinear Analysis: Real World Applications

Volumn 2, Issue 4, 2001, Pages 541-567

  Merz, W ^a   Glitzky, A ^b   Hunlich R ^b   Pulverer, K ^c  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b WEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS   (Germany)

^c SIEMENS AG   (Germany)

Author keywords

Dopant diffusion; Energy estimates; Leray Schauder; Nonlinear reaction drift diffusion equations

Indexed keywords

EID: 0041832368     PISSN: 14681218     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1468-1218(01)00010-4     Document Type: Article

References (17)

1. Antontsev S.N., Kazhikhov A.V., Monakhov V.N. Boundary Value Problems in Mechanics of Nonhomogeneous Fluids. 1990;North-Holland, Amsterdam.
2. Biler P., Hebisch W., Nadzieja T. The Debye system: existenz and large time behaviour of solutions. Nonlinear Anal. 23:1994;1189-1209.
3. Brézis H. Opérateurs maximaux monotones et semi-groupes de contractiones dans les espaces de Hilbert. 1973;North-Holland, Amsterdam.
4. Fahey P.M., Griffin P.B., Plummer J.D. Point defects and dopant diffusion in silicon. Rev. Mod. Phys. 61(2):1989;290-383.
5. Ghaderi K., Hobler G. Simulation of phosphorus diffusion in silicon using a pair diffusion model with a reduced number of parameters. J. Electrochem. Soc. 142(5):1995;1654-1658.
6. Gilbarg D., Trudinger N.S. Elliptic Partial Differential Equations of Second Order. 1977;Springer, Berlin, Heidelberg, New York.
7. Glitzky A., Hünlich R. Global estimates and asymptotics for electro-reaction-diffusion systems. Appl. Anal. 66:1997;205-226.
8. Grisvard P. Elliptic Problems in Nonsmooth Domains. 1985;Pitman, Boston-London-Melbourne.
9. Gröger K. Boundedness and continuity of solutions to linear elliptic boundary problems in two dimensions. Math. Ann. 298:1994;719-728.
10. A. Höfler, N. Strecker, On the coupled diffusion of dopants and silicon point defects, Technical Report 94/11, Integrated Systems Laboratory, Swiss Federal Institute of Technology Zürich.
11. Hünlich R., Glitzky A. On energy estimates for electro-reaction-diffusion equations arising in semiconductor technology. Jaeger W., Necas J., John O., Najzar K., Stara J. Partial Differential Equations, Theory and Numerical Solution, Chapman Hall/CRC Research Notes in Mathematics, Vol. 406. 2000;158-174 Boca Raton.
12. O.A. Ladyženskaja, V.A. Solonnikov, N.N. Ural'ceva, Linear and Quasilinear Equations of Parabolic Type, American Mathematical Society, Providence, RI, 1968.
13. Ladyženskaja O.A., Ural'ceva N.N. Linear and Quasilinear Equations of Elliptic Type. 1968;Academic Press, New York and London.
14. J. Lang, W. Merz, Numerical simulation of single species dopant diffusion in silicon under extrinsic conditions, preprint SC 97-47, ZIB, 1997.
15. W. Merz, Analysis und Numerische Berechnung der Diffusion von Fremdatomen in Homogenen Strukturen, Habilitationsschrift, TU Munich, July 1998. SFB 438: TU Munich, Univ. Augsburg, preprint SFB-438-9920, Oct. 1999.
16. Temam R. Navier-Stokes Equations. 1977;North-Holland, Amsterdam.
17. Trudinger N.S. On imbeddings into Orlicz spaces and some applications. J. Math. Mech. 17:1967;473-483.