Stacking-fault-induced intermediate structure in bismuth titanate

Applied Physics Letters

Volumn 83, Issue 2, 2003, Pages 275-277

  Yoneda, Y ^a   Mizuki, J ^a   Katayama, R ^b   Yagi, K ^b,d   Terauchi, H ^b   Hamazaki, S ^c,e   Takashige, M ^c  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b KWANSEI GAKUIN UNIVERSITY   (Japan)

^c IWAKI MEISEI UNIVERSITY   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^e FUKUSHIMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; MICROSTRUCTURE; QUENCHING; STACKING FAULTS; SYNCHROTRONS; X RAY DIFFRACTION;

INTERMEDIATE STRUCTURE;

BISMUTH COMPOUNDS;

EID: 0041766137     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1592000     Document Type: Article

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