Applications of scanning electrical force microscopy

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1631-1634

  Muller F ^a   Muller A D ^a   Hietschold, M ^a   Kammer S ^b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b TopoMetrix Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; ELECTRIC RESISTANCE; MICROELECTRONICS; MOS DEVICES; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTROSTATIC FORCE; SCANNING ELECTRICAL FORCE MICROSCOPY;

MICROSCOPIC EXAMINATION;

EID: 0041761703     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00127-3     Document Type: Article

References (3)

1. J.R. Matey, J. Blanc, J.Appl.Phys. 57, 1437 (1985)
2. D. Abraham, Y. Martin, H.K. Wickramasinghe, SPIE 897, 191 (1988)
3. A.K. Henning, T. Hochwitz, J. Slinkman, J. Never, S. Hoffmann, P. Kaszuba, C. Daghlian, J.Appl.Phys. 77, 1888 (1995)