Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures

Journal of Applied Physics

Volumn 81, Issue 9, 1997, Pages 6056-6061

  Egger, U ^a   Schultz, M ^a   Werner, P ^a   Breitenstein, O ^a   Tan, T Y ^a,d   Gosele U ^a   Franzheld, R ^b   Uematsu, M ^c   Ito, H ^c  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

^c NTT CORPORATION   (Japan)

^d Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041689871     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364453     Document Type: Article

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