An AlGaAs-GaAs-based RCE MSM photodetector with delta modulation doping

IEEE Electron Device Letters

Volumn 24, Issue 5, 2003, Pages 312-314

  Chen, Xiying ^a   Nabet, Bahram ^a   Cola, Adriano ^b   Quaranta, Fabio ^b   Currie, Marc ^c  

^a Drexel University   (United States)

^b CNR   (Italy)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Aiding field; Electron cloud; Metal semiconductor metal (MSM); Photodetector; Resonant cavity; Schottky barrier height

Indexed keywords

CAVITY RESONATORS; ELECTRIC FIELDS; ELECTRONS; PHOTOCURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR METAL BOUNDARIES;

AIDING FIELD; DELTA MODULATION DOPING; ELECTRON CLOUD; METAL SEMICONDUCTOR METAL PHOTODETECTOR; SCHOTTKY BARRIER HEIGHT;

PHOTODETECTORS;

EID: 0041672441     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812533     Document Type: Article

References (7)

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