Positron beam defect profiling of silicon epitaxial layers

Journal of Applied Physics

Volumn 70, Issue 6, 1991, Pages 3003-3006

  Schut, H ^a   Van Veen, A ^a   Van De Walle, G F A ^b   Gorkum, A A Van ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041655171     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.349329     Document Type: Article

References (15)