High-Temperature Diffusion Leakage-Current-Dependent MOSFET Small-Signal Conductance

IEEE Transactions on Electron Devices

Volumn 31, Issue 12, 1984, Pages 1866-1872

  Early, James M ^b  

^a SCHLUMBERGER   (United States)

^b Fairchild Research Center ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041654381     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21803     Document Type: Article

References (11)

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2. Y. P. Tsividis, “Problems with precision modeling of analog MOS LSI,” inIEDM Tech. Dig., pp. 274–277,1982.
3. P. R. Gray, “Basic MOS operational amplifier design-an overview,” IEEE Press Selected Reprint Series, pp. 28–49,1980.
4. Y. P. Tsividis, The MOS Transistor. New York: McGraw-Hill, to be published.
5. S. Liu and L. W. Nagel “Small-signal MOSFET models for analog circuit design,” IEEE J. Solid-State Circuits, vol. SC-17, no. 6, pp. 983–998, Dec. 1982.
6. F. S. Shoucair, “Electrical characteristics of LSI silicon MOSFET's at very high temperatures,” Ph.D. dissertation, Columbia University, New York, NY, 1983.
7. F. S. Shoucair, W. Hwang, and P. Jain, “Electrical characteristics of LSI silicon MOSFET's at very high temperatures, Part I-Theory,” Theory,” Microelectron. Rel., vol. 24, no. 3, pp. 465–485,1984.
8. —, “Electrical characteristics of LSI silicon MOSFET's at very high temperatures, Part II-Experiment,” Microelectron. Rel., vol. 24, no. 3, pp. 487–510,1984.
9. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
10. J. W. Slotboom, M. J. J. Theunissen, and A. J. R. de Kock “Impact of silicon substrates on leakage currents,” IEEE Electron Device Lett., vol. EDL-4, no. 11, pp. 403–406, Nov. 1983.
11. F. S. Shoucair, “High temperature electrical characteristics of LSI and VLSI silicon MOSFET's,” submitted for publication.