Selective optical sensors from 0.25 to 1.1 μm based on metal oxide-semiconductor heterojunctions

Sensors and Actuators, A: Physical

Volumn 68, Issue 1-3, 1998, Pages 333-337

  Malik, Alexander ^a   Sêco, Ana ^b   Fortunato, Elvira ^c   Martins, Rodrigo ^c  

^a Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

^b INSTITUTO SUPERIOR DE ENGENHARIA DE LISBOA   (Portugal)

^c UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

Heterojunctions; Metal oxide films; Optical sensors; Semiconductors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FABRICATION; HETEROJUNCTIONS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS;

METAL OXIDE FILMS; SPRAY PYROLYSIS;

OPTICAL SENSORS;

EID: 0041636166     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00035-1     Document Type: Article

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