Determination of the metallic-impurity distribution on a silicon wafer by the multiple indicator-rod method for liquid-phase dissolution and graphite-furnace AAS

Bunseki Kagaku

Volumn 46, Issue 5, 1997, Pages 375-379

  Nagasawa, Hiroyuki ^a   Enomoto, Masahisa ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Determination of metallic impurity distribution on a silicon wafer; Graphite furnace AAS; Sampling with concentrated hydrofluotheric acid at room temperature

Indexed keywords

EID: 0041634878     PISSN: 05251931     EISSN: None     Source Type: Journal    
DOI: 10.2116/bunsekikagaku.46.375     Document Type: Article

References (8)

1. A. Shimazaki, H. Hiratsuka, Y. Matsushita, S. Yoshii: Extended Abstracts Conference on Solid State Devices Materials, p. 281 (1984), Kobe.
2. A. Shimazaki: Proc. ECS. Defects in Silicon II, 47 (1991).
3. A. Corradi, M. Domenica, A. Guaglio: J. Crystal Growth, 89, 39 (1988).
4. W. Kern, D. A. Puotinen: RCA Review, 31, 187 (1970).