Highly linear RF CMOS amplifier and mixer adopting MOSFET transconductance linearization by multiple gated transistors

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2003, Pages 107-110

  Kim, Tae Wook ^a   Kim, Bonkee ^b   Lee, Kywro ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Integrant Technologies Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

INTERMODULATION; LOCAL AREA NETWORKS; MIXER CIRCUITS; MOSFET DEVICES; RADIO FREQUENCY AMPLIFIERS; TRANSCONDUCTANCE;

DRAIN CURRENT;

CMOS INTEGRATED CIRCUITS;

EID: 0041589311     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. B. Kim, J. Ko, and K. Lee, "A New Linearization Technique for MOSFET RF Amplifier Using Multiple Gated Transistors," IEEE Microwave and Guided Wave Letters, vol. 10, no. 9, 2000.
2. B. Kim, J. Ko, and K. Lee, "Highly Linear CMOS RF MMIC Amplifier Using Multiple Gated Transistors and its Volterra Series Analysis," IEEE MTT-S, 2001.
3. V. Aparin, and C. Persico, "Effect of out-of-band termination on intermodulation distortion in common emitter circuits," IEEE MTT-S, 1990.