Transport through an array of small ohmic contacts alloyed to the two-dimensional electron gas of a GaAs/AlGaAs heterostructure

Applied Physics Letters

Volumn 68, Issue 24, 1996, Pages 3434-3436

  Chabasseur Molyneux, V ^a   Frost, J E F ^a   Simmons, M Y ^a   Ritchie, D A ^a   Pepper, M ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041475143     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115784     Document Type: Article

References (13)

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2. R. P. Taylor, P. T. Coleridge, M. Davies, Y. Feng, J. McCaffrey, and P. A. Marshall, J. Appl. Phys. AIP 76, 7966 (1994).
3. A. M. Marsh, D. A. Williams, and H. Ahmed, Phys. Rev. B AIP 50, 8118 (1994).
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5. G. Kirczenow, J. Phys. C. 6, L583 (1994).
6. V. Chabasseur-Molyneux, J. E. F. Frost, M. J. Tribble, M. P. Grimshaw, D. A. Ritchie, A. C. Churchill, G. A. C. Jones, M. Pepper, and J. H. Burroughes, J. Appl. Phys. AIP 74, 5883 (1993).
7. The experiments in Ref. 6 were carried out using an annealer that read temperatures approximately 80°C higher than those quoted here.
8. The 2DEG in sample A1 is 300 Å below the surface.
9. D. Weiss, M. L. Roukes, A. Menschig, P. Grambow, K. von Klitzing, and G. Weimann, Phys. Rev. Lett. AIP 66, 2790 (1991).
10. G. Berthold, T. Suski, J. Smoliner, R. Maschek, E. Gornik, G. Böhm, and G. Weimann, Semicond. Sci. Technol. INS 8, 1512 (1993).
11. The antidots do not need to be entirely depleted, as shown in Ref. 10.
12. c=V/I was measured at an applied voltage of +100 mV.
13. P. Guéret, P. Buchmann, K. Daetwyler, and P. Vettiger, Appl. Phys. Lett. AIP 55, 1735 (1989).