Thermodynamic analysis of metalorganic chemical vapour deposition of SiC using tetramethylsilane as precursor. II. Influence of the minoritary tetramethylsilane pyrolysis byproducts in the preferred crystallization of SiC layers

Journal of Crystal Growth

Volumn 148, Issue 4, 1995, Pages 390-395

  Madigou, V ^a   Veintemillas, S ^a   Rodriguez Clemente R ^a   Figueras, A ^a   Armas, B ^b   Combescure, C ^b  

^a INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041414778     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(94)00646-6     Document Type: Article

References (4)