Transformation of dense contact holes during SiO2 etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 B, 2003, Pages 3962-3965

  Sakamori, Shigenori ^a   Fujiwara, Nobuo ^a   Miyatake, Hiroshi ^a,c   Oikawa, Kota ^b   Yamanaka, Michinari ^b   Sasaki, Tomoyuki ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c Advanced SoC Platform Corporation   (Japan)

Author keywords

ArF positive resist; Deformation; Fluorocarbon; Plasma etching; Silicon dioxide; Striation

Indexed keywords

DEFORMATION; FLUOROCARBONS; PHOTORESISTS; SILICA;

STRIATION;

PLASMA ETCHING;

EID: 0041360515     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.3962     Document Type: Conference Paper

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