-
1
-
-
0031676207
-
Ultra-fast optoelectronic circuit using resonant tunnelling diodes and unitravelling-carrier photodiode
-
Sano, K., Murata, K., Akeyoshi, T., Shimizu, N., Otsuji, T., Yamamoto, M., Ishibashi, T., and Sano, E.: 'Ultra-fast optoelectronic circuit using resonant tunnelling diodes and unitravelling-carrier photodiode', Electron. Lett., 1998, 34, (2), pp. 215-217
-
(1998)
Electron. Lett.
, vol.34
, Issue.2
, pp. 215-217
-
-
Sano, K.1
Murata, K.2
Akeyoshi, T.3
Shimizu, N.4
Otsuji, T.5
Yamamoto, M.6
Ishibashi, T.7
Sano, E.8
-
2
-
-
0031999957
-
Photodetector nonlinear limitations on a high-dynamic range 3 GHz fiber optic link
-
Williams, K.J., Nichols, L.T., and Esman, R.D.,: 'Photodetector nonlinear limitations on a high-dynamic range 3 GHz fiber optic link', J. Lightwave Technol., 1998, 16, (2), pp. 192-199
-
(1998)
J. Lightwave Technol.
, vol.16
, Issue.2
, pp. 192-199
-
-
Williams, K.J.1
Nichols, L.T.2
Esman, R.D.3
-
3
-
-
0032679871
-
Saturation characteristics of fast photodetectors
-
Liu, P.-L., Williams, K.J., Frankel, M.Y., and Esman, R.D.: 'Saturation characteristics of fast photodetectors', IEEE Trans. Microw. Theory Tech., 1999, 47 (7), pp. 1297-1303
-
(1999)
IEEE Trans. Microw. Theory Tech.
, vol.47
, Issue.7
, pp. 1297-1303
-
-
Liu, P.-L.1
Williams, K.J.2
Frankel, M.Y.3
Esman, R.D.4
-
4
-
-
0033347994
-
Design considerations for high-current photodetectors
-
Williams, K.J., and Esman, R.D.: 'Design considerations for high-current photodetectors', J. Lightwave Technol., 1999, 17, (8), pp. 1443-1454
-
(1999)
J. Lightwave Technol.
, vol.17
, Issue.8
, pp. 1443-1454
-
-
Williams, K.J.1
Esman, R.D.2
-
5
-
-
0034481324
-
Correlation between the failure mechanism and dark currents of high power photodetectors
-
Islam, M.S., Nespola, A., Yeahia, M., Wu, M.C., Sivco, D.L., and Cho, A.Y.: 'Correlation between the failure mechanism and dark currents of high power photodetectors', Lasers and Electro-Optics Society 2000 Annual Mtg., LEOS 2000, IEEE, 2000, Vol. 1, pp. 82-83
-
Lasers and Electro-Optics Society 2000 Annual Mtg., LEOS 2000, IEEE, 2000
, vol.1
, pp. 82-83
-
-
Islam, M.S.1
Nespola, A.2
Yeahia, M.3
Wu, M.C.4
Sivco, D.L.5
Cho, A.Y.6
-
6
-
-
0027987707
-
High-power microwave photodiode for high-dynamic-range analog transmission
-
Paper ThG5
-
Paslaski, J., Chen, P.C., Chen, J.S., and Bar-Chaim, N.: 'High-power microwave photodiode for high-dynamic-range analog transmission'. Proc. Optical Fiber Communication Conf. Tech. Dig., Washington, DC, Optical Society of America, 1994, Paper ThG5, pp. 208-209
-
Proc. Optical Fiber Communication Conf. Tech. Dig., Washington, DC, Optical Society of America, 1994
, pp. 208-209
-
-
Paslaski, J.1
Chen, P.C.2
Chen, J.S.3
Bar-Chaim, N.4
-
7
-
-
0003539448
-
Physical properties of III-V semiconductor compounds
-
(Wiley-Interscience, New York)
-
Adachi, S.: 'Physical properties of III-V semiconductor compounds' (Wiley-Interscience, New York, 1992)
-
(1992)
-
-
Adachi, S.1
-
8
-
-
0003395029
-
Numerical data and functional relationships in science and technology
-
(Springer-Verlag)
-
Landolt, M. and Börenstein, J.: 'Numerical data and functional relationships in science and technology', Vol. 17a of New Series, Group III (Springer-Verlag, 1982)
-
(1982)
New Series, Group III
, vol.17 A
-
-
Landolt, M.1
Börenstein, J.2
-
9
-
-
0030269654
-
A 920-1650 nm high current photodetector
-
Davis, G.A., Weiss, R.E., Larue, R.A., Williams, K.J., and Esman, R.D.: 'A 920-1650 nm high current photodetector', IEEE Photonics Technol. Lett., 1996, 8, (10), pp. 1373-1375
-
(1996)
IEEE Photonics Technol. Lett.
, vol.8
, Issue.10
, pp. 1373-1375
-
-
Davis, G.A.1
Weiss, R.E.2
Larue, R.A.3
Williams, K.J.4
Esman, R.D.5
-
10
-
-
0012021838
-
High performance InGaAs-on-silicon avalanche photodiodes
-
Paper WV7
-
Pauchard, A., Kang, Y., Mages, P., Bitter, M., Sengupta, D., Pan, Z., Hummel, S., Yu, P.K.L., and Lo, Y.H.: 'High performance InGaAs-on-silicon avalanche photodiodes'. Proc. Optical Fiber Communication Conf. Tech. Dig., Anaheim, CA, USA, Optical Society of America, 2002, Paper WV7, pp. 344-345
-
Proc. Optical Fiber Communication Conf. Tech. Dig., Anaheim, CA, USA, Optical Society of America, 2002
, pp. 344-345
-
-
Pauchard, A.1
Kang, Y.2
Mages, P.3
Bitter, M.4
Sengupta, D.5
Pan, Z.6
Hummel, S.7
Yu, P.K.L.8
Lo, Y.H.9
-
11
-
-
0029511778
-
High performance InGaAs photodetectors on Si and GaAs substrates
-
Ejeckam, F.E., Chua, C.L., Zhu, Z.H., Lo, Y.H., Hong, M., and Bhat, R.: 'High performance InGaAs photodetectors on Si and GaAs substrates', Appl. Phys. Lett., 1995, 67, (26), pp. 3936-3938
-
(1995)
Appl. Phys. Lett.
, vol.67
, Issue.26
, pp. 3936-3938
-
-
Ejeckam, F.E.1
Chua, C.L.2
Zhu, Z.H.3
Lo, Y.H.4
Hong, M.5
Bhat, R.6
-
12
-
-
6044253684
-
20 GHz high performance planar Si/InGaAs p-i-n photodetector
-
Levine, B.F., Hawkins, A.R., Hiu, S., Tseng, B.J., King, C.A., Gruezke, L.A., Johnson, R.W., Zolnowski, D.R., and Bowers, J.E.: '20 GHz high performance planar Si/InGaAs p-i-n photodetector', Appl. Phys. Lett., 1997, 70, (18), pp. 2449-2451
-
(1997)
Appl. Phys. Lett.
, vol.70
, Issue.18
, pp. 2449-2451
-
-
Levine, B.F.1
Hawkins, A.R.2
Hiu, S.3
Tseng, B.J.4
King, C.A.5
Gruezke, L.A.6
Johnson, R.W.7
Zolnowski, D.R.8
Bowers, J.E.9
-
13
-
-
0032606191
-
Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors
-
Levine, B.F., Pinzone, C.J., Hui, S., King, C.A. Leibenguth, R.E., Zolnowski, D.R., Lang, D.V., Krautter, H.W., and Geva, M.: 'Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors', Appl. Phys. Lett., 1999, 75, (14), pp. 2141-2143
-
(1999)
Appl. Phys. Lett.
, vol.75
, Issue.14
, pp. 2141-2143
-
-
Levine, B.F.1
Pinzone, C.J.2
Hui, S.3
King, C.A.4
Leibenguth, R.E.5
Zolnowski, D.R.6
Lang, D.V.7
Krautter, H.W.8
Geva, M.9
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