Analysis of low noise, bipolar transistor head amplifiers for high energy applications of silicon detectors

Nuclear Instruments and Methods

Volumn 193, Issue 3, 1982, Pages 533-538

  D'Angelo, P ^a   Hrisoho, A ^b   Jarron, P ^c   Manfredi, P F ^a,d   Poinsignon, J ^e  

^a INFN SEZIONE DI MILANO   (Italy)

^b UNIVERSITÉ PARIS SUD   (France)

^c CERN   (Switzerland)

^d UNIVERSITY OF PAVIA   (Italy)

^e CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS; TRANSISTORS, BIPOLAR;

PARTICLE DETECTORS;

EID: 0041326147     PISSN: 0029554X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0029-554X(82)90247-6     Document Type: Article

References (8)

1. A silicon surface barrier microstrip detector designed for high energy physics
2. Signal Coupling from a Semiconductor Detector to a Cold Resistance Preamplifier Through a Cable or a Delay - Line Transformer