Experimental study on microwave vulnerability effect of integrated circuit

Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams

Volumn 15, Issue 6, 2003, Pages 591-594

  Fang, Jin Yong ^a   Shen, Ju Ai ^a   Yang, Zhi Qiang ^a   Qiao, Deng Jiang ^a  

^a NORTHWEST INSTITUTE OF NUCLEAR TECHNOLOGY   (China)

Author keywords

High power microwave; Integrated circuit(IC); Microwave vulnerability effect

Indexed keywords

EXPERIMENTS; MICROWAVES; RADIATION EFFECTS;

DAMAGE POWER THRESHOLD; HIGH POWER MICROWAVE; MICROWAVE INDUCED VULNERABILITY;

INTEGRATED CIRCUITS;

EID: 0041317378     PISSN: 10014322     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

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2. Fang J Y, Liu G Z, Li P, et al. Experimental study of the high power microwave pulse-width effect. High Power Laser and Particle Beams, 1999, 11(5): 639-642.
3. Li P, Liu G Z, Huang W H, et al. The mechanism of HPM pulse-duration damage effects on semiconductor component. High Powder Laser and Particle Beams, 2001, 13(3): 353-356.
4. Yu W, Cha X H, Zhou C M, et al. Calculation of nonlinear response of the silicon diode to the high-power microwave. High Power Laser and Particle Beams, 2000, 12(3): 324-326.
5. Yu W, Cha X H, Huang W H, et al. The current-mode destroy of semiconductor devices by electromagnetic pulse. High Power Laser and Particle Beams, 1999, 11(3): 355-358.