Uniform Nanoscale SiO2 Encapsulation of ZnS Phosphors for Improved Aging Properties under Low Voltage Electron Beam Excitation

Journal of the Electrochemical Society

Volumn 148, Issue 10, 2001, Pages

  Do, Y R ^a   Park, D H ^a   Yang, H G ^a   Park, W ^b   Wagner, B K ^b   Yasuda, K ^b,c   Summers, C J ^b  

^a Samsung SDI   (South Korea)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041300637     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1397775     Document Type: Article

References (9)

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3. W. Park, B. K. Wagner, G. Russell, K. Yasuda, C. J. Summers, Y. R. Do, and H. G. Yang, p. 369, The Fifth International Conference on the Science and Technology of Display Phosphors Extended Abstracts, Vol. 5, Phosphor Technology Center of Excellence (PTCOE), Nov 8, 1999.
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