Absorption in lead telluride implanted with large doses of argon

Semiconductors

Volumn 30, Issue 6, 1996, Pages 605-607

  Veis A N ^a  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041153940     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. H. Heinrich, Proc. Int. Summer School on Narrow-Gap Semiconductors: Physics and Application. Nimes, France, 1979. (Berlin, Springer-Verlag, 1980), p. 407).
2. A. N. Veǐs, Z. M. Dashevskiǐ, and M. P. Rulenko, Fiz. Tekh. Poluprovodn. 24, 126 (1990) [Sov. Phys. Semicond. 24, 76 (1990)].
3. A. N. Veǐs, Z. M. Dashevskiǐ, and M. P. Rulenko, Fiz. Tekh. Poluprovodn. 24, 126 (1990) [Sov. Phys. Semicond. 24, 76 (1990)].
4. A. N. Veǐs, A. Yu. Rydanov, and N. A. Suvorova, Fiz. Tekh. Poluprovodn. 27, 701 (1993) [Semiconductors 27, 386 (1993)].
5. A. N. Veǐs, A. Yu. Rydanov, and N. A. Suvorova, Fiz. Tekh. Poluprovodn. 27, 701 (1993) [Semiconductors 27, 386 (1993)].
6. I. A. Drabkin, L. Ya. Morgovskiǐ, I. V. Nel'son, and Yu. I. Ravich, Fiz. Tekh. Poluprovodn. 6, 1323 (1972) [Sov. Phys. Semicond. 6, 1156 (1972)].
7. I. A. Drabkin, L. Ya. Morgovskiǐ, I. V. Nel'son, and Yu. I. Ravich, Fiz. Tekh. Poluprovodn. 6, 1323 (1972) [Sov. Phys. Semicond. 6, 1156 (1972)].
8. N. S. Bespalova, A. N. Veǐs, and Z. M. Dashevskiǐ, Fiz. Tekh. Poluprovodn. 21, 946 (1987) [Sov. Phys. Semicond. 21, 577 (1987)].
9. N. S. Bespalova, A. N. Veǐs, and Z. M. Dashevskiǐ, Fiz. Tekh. Poluprovodn. 21, 946 (1987) [Sov. Phys. Semicond. 21, 577 (1987)].
10. Yu. I. Ukhanov, Optical Properties of Semiconductors, Nauka, Moscow, 1977.
11. W. W. Scanlon, J. Phys. Chem. Sol. 8, 423 (1959).