(NH4)2Sx-treated InP(100) surfaces studied by soft x-ray photoelectron spectroscopy

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 593-596

  Maeyama, S ^a   Sugiyama, M ^a   Heun, S ^a   Oshima, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

(NH4)2Sx treatment; GaAs; InP; Photoelectron spectroscopy; Soft x ray; Sulfur; Surface passivation; Synchrotron radiation

Indexed keywords

EID: 0041124276     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666509     Document Type: Article

References (14)

1. Y. Nannichi, J.F. Fan, H. Oigawa and A. Koma, Jpn. J. Appl. Phys. 27, L2367 (1988).
2. R. Iyer, R.R. Chang and D.L. Lile, Appl. Phys. Lett. 53, 134 (1988).
3. W.M. Lau, S.Jin, X.W. Wu and S. Ingrey, J. Vac. Sci. Technol. A 9, 994 (1991).
4. Y. Tao, A. Yelon, E. Sacher, Z.H. Lu and M. J. Graham, Appl. Phys. Lett. 60, 2669 (1992).
5. D. Gallet and G. Hollinger, Appl. Phys. Lett. 62, 982 (1993).
6. Y. Fukuda, Y. Suzuki, N. Sanada, S. Sasaki and T. Ohsawa, J. Appl. Phys. 76, 3059 (1994).
7. F. Maeda, Y. Watanabe and M. Oshima, Appl. Phys. Lett. 62, 297 (1993).
8. T. Kawamura, S. Maeyama, M. Oshima, Y. Ishii and T. Miyahara, Rev. Sci. Instrum. 60, 1928 (1989).
9. G.W. Anderson, M.C. Hanf, P.R. Norton, Z.H. Lu and M.J. Graham, Appl. Phys. Lett. 65, 171 (1994).
10. H. Oigawa, J.F. Fan, Y. Nannichi, H. Sugahara and M. Oshima, Jpn. J. Appl. Phys. 30, L322 (1991).
11. M.M. Hyland and G.M. Bancroft, Geochim. Cosmochim. Acta 53, 367 (1989).
12. H. Sugahara, M. Oshima, H. Oigawa, H. Shigekawa, and Y. Nannichi, J. Appl. Phys. 15, 4349 (1991).
13. T.A. Tyson, A.L. Roe, P. Frank and K.O. Hodgson, Phys. Rev. B 39, 6305 (1989).
14. S. Maeyama, M. Sugiyama and M. Oshima, to be published in J. Elect. Spec. Rel. Phenom.