Influence of vapor phase composition in a growth cell on the doping level of silicon carbide epitaxial layers grown by vacuum sublimation

Semiconductors

Volumn 30, Issue 11, 1996, Pages 1074-1077

  Andreev, A N ^a   Smirnova, N Yu ^a   Shcheglov, M P ^a   Rastegaeva, M G ^a   Chelnokov, V E ^a   Rastegaev, V P ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041117750     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (20)

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