Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing

Semiconductors

Volumn 31, Issue 2, 1997, Pages 189-193

  Verbitskaya, E M ^a   Eremin, V K ^a   Ivanov, A M ^a   Li, Z ^b   Schmidt, B ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041108640     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187105     Document Type: Article

References (9)

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7. E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, N. B. Strokan, Z. Li, and B. Schmidt, Fiz. Tekh. Poluprovodn. 27, 2068 (1993) [Semiconductors 27, (1993)].
8. B. Schmidt, V. Eremin, A. Ivanov, N. Strokan, E. Verbitskaya, and Z. Li, J. Appl. Phys. 76, 4072 (1994).
9. S. D. Brotherton and P. Bradley, J. Appl. Phys. 53, 5720 (1982).