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0041043826
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McMurray, Jr., R.E., Haegel, N.M., Kahn, J.M. and Haller, E.E., Solid State Commun., 61, 1987, 21; Kahn, J.M., McMurray, Jr., R.E., Haller, E.E. and Falikov, L.M., Phys. Rev. B, 36, 1987, 8001.
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3
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85033920299
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note
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Note that in [1] this defect has been designated by A(Zn-H).
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-
-
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5
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0004814343
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h, is used to describe the impurity states under a spherical Coulomb potential. This notation is carried over to the models for the Zeeman effect of the group III acceptors (see [9] below).
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Phys. Rev. B
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Rodriguez, S.1
Fisher, P.2
Barra, F.3
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6
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0000410789
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for a review
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h, is used to describe the impurity states under a spherical Coulomb potential. This notation is carried over to the models for the Zeeman effect of the group III acceptors (see [9] below).
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Ramdas, A.K.1
Rodriguez, S.2
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7
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85033925692
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note
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These ingots were grown at Purdue University by the late Ms Louise Roth; a reducing atmosphere of hydrogen was used in the furnace.
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8
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0041036098
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Thewalt, M.L.W., Clayman, B.P. and Labrie, D., Phys. Rev. B, 32, 1985, 2663.
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Labrie, D.3
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9
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0004773442
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Jones, R.L. and Fisher, P., J. Phys. Chem. Solids, 26, 1965, 1125.
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Jones, R.L.1
Fisher, P.2
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10
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41549167718
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(Edited by C.A.J. Ammerlaan and B. Pajot), World Scientific, Singapore
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Baker, R.J., Fisher, P., Vickers, R.E.M., Haller, E.E. and Hansen, W.L., Proc. 7th Int. Conf. Shallow-Level Centers in Semicond., Amsterdam, 1996 (Edited by C.A.J. Ammerlaan and B. Pajot), p. 357. World Scientific, Singapore, 1997.
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12
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0041043813
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Broeckx, J., Phys. Rev. 5, 43, 1991, 9643; Schmitt, W.O.G., Bangert, E. and Landwehr, G., J. Phys.: Condens. Matter., 3, 1991, 6789.
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Schmitt, W.O.G.1
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Baker, R.J., Fisher, P., Freeth, C.A., Ryan, D.S. and Vickers, R.E.M., Solid State Commun., 93, 1995, 353.
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