Application of a new empirical model to the electron beam lithography process with chemically amplified resists

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 6761-6766

  Ham, Young Mog ^a   Baik, Ki Ho ^a   Lee, Won Gyu ^b   Chung, Tack Dong ^c   Chun, Kukjin ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b Seoul National University   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

CAR; Contrast; Deep submicron; Electron beam; Profile; Simulation; Solubility

Indexed keywords

EID: 0041005971     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6761     Document Type: Article

References (10)

1. A. A. Krasnoperova, M. Khan, S. Rhyner, J. W. Taylor, Y. Zhu and F. Cerrina: J. Vac. Sci. Technol. B12 (1994) 3900.
2. H. Fukuda and S. Okazaki: J. Electrochem. Soe. 137 (1990) 675.
3. T. Ohfuji, K. Nakano, K. Maeda and E. Haswgawa: J. Vac. Sci. Technol. 1513 (1995) 3022.
4. T. H. Fefynyshyn, C. R. Szmanda, R. F. Blacksmith, W. E. Houck and J. C. Root: J. Vac. Sci. Tcchnol. B11 (1993) 2798.
5. L. Capodicci, A. A. Krasnoperova and F. Cerrina: J. Vac. Sci. Technol. B13 (1995) 2963.
6. T. Matsuzawa, T. Ito and M. Tanuma: IEEE Trans. Electron Devices ED-32 (1985) 1981.
7. T. Yoshimura, Y. Nakayama and S. Okazaki: J. Vac. Sci. Tcchnol. B10 (1992) 2615.
8. C. A. Mack: J. Electrochem. Soc. 139 (1992) L35.
9. H. Yoshino and H. Matsumoto: Jpn. Appl. Phys. 31 (1992) 4283
10. D. R. Mckean, R. D. Allen, P. H. Kasai, U. P. Schaedeli and S. A. Macdonald: Proc. SPIE 1672 (1992) 94.