Study of post-deposition contamination in low-temperature deposited polysilicon films

Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 96-99

  Bertomeu, J ^a   Puigdollers, J ^a   Peiro D ^a   Cifre, J ^a   Delgado, J C ^a   Andreu, J ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

Author keywords

Chemical vapour deposition; Polysilicon films

Indexed keywords

EID: 0040928120     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01300-8     Document Type: Article

References (7)

1. D. Jousse, S.L. Delage and S.S. Iyer, Philos. Mag., B63 (1991) 443.
2. M. Aucouturier, Physica, B170 (1991) 469.
3. J. Cifre, J. Bertomeu, J. Puigdollers, M.C. Polo, J. Andreu and A. Lloret, Appl. Phys., A59 (1994) 645.
4. Y.B. Chabal, G.S. Higashi and S.B. Christman, Phys. Rev. B28 (1983) 4472.
5. H. Ubara, T. Imura and A. Hiraki, Solid State Commun., 50 (1984) 673.
6. J.E. Olsen and F. Shimura, Appl. Phys. Lett., 53 (1988) 1934.
7. B. Pajot, H.J. Stein, B. Cales and C. Naud, J. Electrochem. Soc., 132 (1985) 3034.