SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Applied Physics Letters

Volumn 37, Issue 11, 1980, Pages 1022-1024

Reactive-ion etching of GaAs and InP using CCl2F 2/Ar/O2

(2) Hu, E L a Howard, R E a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040832268 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.91750 Document Type: Article

Times cited : (95)

References (10)

1
- 0017946534
- (1978) J. Vac. Sci. Technol. , vol.15 , pp. 319
- Lehmann, H.W.¹ Widmer, R.²

2
- 84950839078
- A [formula omitted] gas mixture has also been used to etch InP; see (Optical Society of America, Washington, D.C.) Paper WA2
- (1980) Technical Digest, Topical Meeting on Integrated and Guided Wave Optics, 1980
- Howard, R.E.¹ Hu, E.L.² Coldren, L.A.³

3
- 0003494870
- edited by John L. Vossen and Wernwer Kern (Academic, New York)
- (1978) Thin Film Processes , pp. 527
- Melliar-Smith, C.M.¹ Mogab, C.J.²

4
- 84951338677
- (private communication)
- Smolinsky, G.¹

5
- 0018469799
- (1979) J. Appl. Phys. , vol.50 , pp. 3189
- Coburn, J.W.¹ Winters, H.F.²

6
- 0017552641
- (1977) J. Electrochem. Soc. , vol.126 , pp. 1766
- Mogab, C.J.¹ Shankoff, T.A.²

7
- 84951338674
- (private communication)
- Prober, D.¹

8
- 0018440087
- (1979) J. Electrochem. Soc. , vol.126 , pp. 464
- Schwartz, G.C.¹ Rothman, L.B.² Schopen, T.J.³

9
- 11344281301
- (1980) Appl. Phys. Lett. , vol.36 , pp. 592
- Howard, R.E.¹ Hu, E.L.² Jackel, L.D.³

10
- 61949450935
- (1975) Jpn. J. Appl. Phys. , vol.14 , pp. 1825
- Abe, H.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.