Activated nitrogen source with an inverted magnetron geometry for molecular beam epitaxy of GaN

Semiconductors

Volumn 30, Issue 7, 1996, Pages 690-693

  Drozdova, S V ^a   Kipshidze, G D ^a   Lebedev, V B ^a   Novikov, S V ^a   Sharonova, L V ^a   Shik, A Ya ^a   Zhmerik, V N ^a   Kuznetsov, V M ^a   Andrianov, A V ^a   Gurevich, A M ^a   Zinov'ev, N N ^a   Foxon, C T ^b   Cheng, T S ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040795916     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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5. V. M. Kuznetsov, V. N. Jmerik, and S. N. Domrachev, in Proc. International Symp. Nanostructures: Physics and Technology, St. Petersburg (1993), p. 114.
6. C. T. Foxon, T. S. Cheng, S. V. Novikov, D. E. Ladklison, L. C. Jenkins, D. Johnston, J. W. Orton, S. E. Hooper, N. Baba-Ali, T. L. Tansley, and V. V. Tret'yakov, J. Cryst. Growth 150, 892 (1995).
7. N. N. Zinov'ev, A. V. Andrianov, B. Y. Averbukh, I. D. Yaroshetskii, T. S. Cheng, L. C. Jenkins, S. E. Hooper, C. T. Foxon, and J. W. Orton, Semicond. Sci. Technol. 10, 1117 (1995).
8. T. S. Cheng, L. C. Jenkins, S. E. Hooper, C. T. Foxon, J. W. Orton, and D. E. Lachlison, Appl. Phys. Lett. 66, 1509 (1995).