Generation of thermal donors as a result of one-and two-step annealing of silicon crystals with large and small carbon concentrations

Semiconductors

Volumn 30, Issue 5, 1996, Pages 417-419

  Babich, V M ^a   Baran, N P ^a   Bugai A A ^a   Kiritsa, V L ^a   Maksimenko, V M ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040795773     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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