Regrowth of the photoquenchable defect relating to the hopping conduction in arsenic-ion-implanted semi-insulating GaAs

Journal of Applied Physics

Volumn 80, Issue 8, 1996, Pages 4488-4490

  Kuriyama, K ^a   Kazama, K ^a   Kato, Takashi ^a   Yamamoto, S ^b   Aoki, Y ^b   Naramoto, H ^b  

^a HOSEI UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040767422     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363423     Document Type: Article

References (21)

1. M. Kaminska, E. R. Weber, Z. Liliental-Weber, R. Leon, and Z. U. Rek, J. Vac. Sci. Technol. B 37, 710 (1989).
2. T. A. Gant, H. Shen, J. R. Flemish, L. Fotiadis, and M. Dutta, Appl. Phys. Lett. 60, 1453 (1992).
3. P. S. Pizani, A. Mlayah, J. Groenen, R. Carles, and A. Claverie, Appl. Phys. Lett. 66, 1927 (1995).
4. G-R. Lin, W-C. Chen, C-S. Chang, and C-L. Pan, Appl. Phys. Lett. 65, 3272 (1994).
5. H. Fujioka, E. R. Weber, and A. K. Verma, Appl. Phys. Lett. 66, 2116 (1995).
6. N. F. Mott, J. Non-Cryst. Solids 1, 1 (1968).
7. M. Satoh and K. Kuriyama, Phys. Rev. B 40, 3473 (1989); K. Kuriyama, K. Yokoyama, and K. Taniguchi, ibid. 6257 (1992).
8. M. Satoh and K. Kuriyama, Phys. Rev. B 40, 3473 (1989); K. Kuriyama, K. Yokoyama, and K. Taniguchi, ibid. 6257 (1992).
9. K. Tomizawa, K. Sassa, Y. Shimanuki, and J. Nishizawa, J. Electrochem. Soc. 131, 2394 (1984).
10. K. Kuriyama, M. Satoh, and C. Kim, Appl. Phys. Lett. 48, 411 (1986).
11. K. Kuriyama, T. Kato, S. Tajima, T. Kato, and S. Takeda, Appl. Phys. Lett. 66, 2995 (1995).
12. K. K. Tiong, P. M. Amirtharaj, F. H. Pollak, and D. E. Aspnes, Appl. Phys. Lett. 44, 122 (1984).
13. K. Kuriyama, K. Tomizawa, M. Kashiwakura, and K. Yokoyama, J. Appl. Phys. 76, 3552 (1994).
14. M. J. Hollis, Phys. Rev. B 8, 931 (1973).
15. C. S. Rama Rao, S. Sundaram, R. L. Schmidt, and J. Comas, J. Appl. Phys. 54, 1808 (1983).
16. T. Nakamura, and T. Katoda, J. Appl. Phys. 53, 5870 (1982).
17. D. C. Look, D. C. Walters, M. O. Manasreh, J. R. Sizelove, C. E. Stutz, and K. R. Evans, Phys. Rev. B 42, 3578 (1990).
18. R. C. Coates and E. W. J. Mitchell, J. Phys. C 5, L113 (1972).
19. A. H. Clark, Phys. Rev. 154, 750 (1967).
20. M. Morgan and P. A. Wally, Philos. Mag. 23, 661 (1971).
21. K. Kuriyama, M. Satoh, and K. Yokoyama, in Proceedings of the 20th International Conference on The Physics of Semiconductors, Thessaloniki, Greece, 1990, edited by E. M. Anastassakis and J. D. Joannopoulos (World Scientific, Singapore, 1991), Vol. 3, pp. 2558-2561.