Chirp reduction in semiconductor lasers through injection current patterning

Applied Physics Letters

Volumn 78, Issue 25, 2001, Pages 3938-3940

  Dokhane, N ^a   Lippi, G L ^a  

^a UNIVERSITÉ CÔTE D'AZUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040753035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1379060     Document Type: Article

References (11)

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2. For a most recent example, cf. S. Riyopoulos, Appl. Phys. Lett. 75, 3057 (1999).
3. G. L. Lippi, S. Barland, N. Dokhane, F. Monsieur, P. A. Porta, H. Grassi, and L. M. Hoffer, J. Opt. B: Quantum Semiclass. Opt. 2, 375 (2000).
4. R. Olshanski and D. Fye, Electron. Lett. 20, 928 (1984): L. Bickers and L. D. Westbrook, IEE Proc.-J: Optoelectron. 133, 155 (1986).
5. R. Olshanski and D. Fye, Electron. Lett. 20, 928 (1984): L. Bickers and L. D. Westbrook, IEE Proc.-J: Optoelectron. 133, 155 (1986).
6. 3 to prevent junction reverse biasing (cf. Figs. 1 and 2 for definitions). This way, the duration of each step for a successful elimination of RO is fixed (as can be best seen by representing the trajectories in the plane S vs N).
7. K. Petermann Laser Diode Modulation and Noise (Kluwer, Dordrecht, 1988).
8. D. M. Byrne, J. Lightwave Technol. LT-10, 1087 (1992).
9. We will consider the laser biased above threshold, but similar spectral improvements can be obtained when the laser is biased below threshold.
10. Current technology allows for the realization of direct current fronts with 15 ps rise time. The non-negligible duration of the transition time, compared to the abrupt numerical one, can easily be compensated for by an adequate modification of step heights and durations (cf. Ref. 10).
11. N. Dokhane, Ph. D. thesis, Université de Nice-Sophia Antipolis, France, September 2000 (in French).