Diffusion-controlled creep in mixed-conducting oxides

Defect and Diffusion Forum

Volumn 143-147, Issue , 1997, Pages 1201-1206

  Routbort, J L ^a   Wolfenstine, J ^b   Goretta, K C ^a   Cook, R E ^a   Armstrong, T R ^c   Clauss, C ^d   Dominguez Rodriguez A ^d  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b University of California at Irvine   (United States)

^c PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF SEVILLE   (Spain)

Author keywords

Creep; Deformation; Diffusion; Oxides; Perovskite

Indexed keywords

DEFORMATION; DIFFUSION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LANTHANUM COMPOUNDS; MANGANESE COMPOUNDS; OXIDES; PEROVSKITE; POINT DEFECTS; TRANSMISSION ELECTRON MICROSCOPY;

CREEP PARAMETERS; DIFFUSION CONTROLLED; LATTICE DIFFUSION; MIXED CONDUCTING OXIDES; OXYGEN PARTIAL PRESSURE; POINT DEFECT MODEL (PDM); STEADY STATE CREEP RATE; TRANSMISSION ELECTRON MICROSCOPY OBSERVATION;

CREEP;

EID: 0040752887     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/DDF.143-147.1201     Document Type: Article

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