Valence band offset and interface formation of Ge/ZnSe(100) studied by synchrotron radiation photoemission

Journal of Electron Spectroscopy and Related Phenomena

Volumn 80, Issue , 1996, Pages 193-196

  Yang, Fengyuan ^a   Ban, Dayan ^a   Fang, Rongchuan ^a   Xu, Shihong ^b   Xu, Pengshou ^b   Yuan, Shixin ^c  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b National Synchrotron Radiation Laboratory   (China)

^c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040751739     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/0368-2048(96)02954-4     Document Type: Article

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