Buried double p-n junction structure using a CMOS process for wavelength detection

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3226, Issue , 1997, Pages 204-213

  Lu, G N ^a   Ben Chouikha, M ^a   Sedjil, M ^a   Sou, G ^a   Alquie, G ^a   Rigo, S ^a  

^a SORBONNE UNIVERSITÉ   (France)

Author keywords

Buried double p n junction; CMOS process; Silicon sensing devices; Wavelength detection

Indexed keywords

MICROELECTRONIC PROCESSING; MICROELECTRONICS; SEMICONDUCTOR JUNCTIONS;

CMOS PROCESSS; MICROSPECTROPHOTOMETRY; P-N JUNCTION; PHYSICALLY BASED MODELING; SENSING DEVICES; STANDARD CMOS PROCESS; WAVELENGTH CALIBRATION; WAVELENGTH DETECTION;

CMOS INTEGRATED CIRCUITS;

EID: 0040716500     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.284570     Document Type: Conference Paper

References (9)

1. G. N. Lu, M. B. Chouikha, G. Sou and M. Sedjil, "Colour detection using a buried double p-n junction structure implemented in the CMOS process", Electron. Lett., Vol. 32, pp. 594-596, 1996
2. W. Boyle and G. Smith, "Charge coupled semiconductor devices", Bull Syst. Tech. J., Vol. 49, pp. 587-593, 1970
3. W. C. Dash and R. Newman, "Intrinsic optical absorption in single-crystal germanium and silicon at 77°K and 300°K", Phys. Rev., Vol. 99, pp. 1151-1155, 1955
4. J. Geist, A. Migdall and H.-P. Baites, "Analytic representation of the silicon absorption coefficient in the indirect transition region", Appl. Opt., Vol. 27, pp. 3777-3779, 1988
5. M. Bartek, P. T. J. Gennissen, P. M. Sarro, P. J. French and R. F. Wolffenbuttel, "An integrated silicon colour sensor using selective epitaxial growth", Sens. Actuators A, 41-42, pp. 123-128, 1994
6. M. Ben Chouikha, G. N. Lu, M. Sedjil and G. Sou, "Color sensitive photo-detectors in standard CMOS and BiCMOS technologies", Proc. of the 'Avanced Focal Plane Arrays and Electronic Cameras' conference, Spie Vol. 2950, pp. 108-120, 1996
7. T. Huen," Reflectance of thinly oxidised silicon at normal incidence", Appl. Opt., Vol. 18, pp. 1927-1932, 1979
8. K. Rajkanan, R. Singh and J. Shewchun, "Absorption coefficient of silicon for solar cell calculations", Solid-St. Electronics, Vol. 22, pp. 793-795, 1979
9. C. Jacoboni, C. Canali, G. Ottaviani and A. Alberigi Quaranta: "A review of some charge transport properties of silicon", Solid-St. Electronics, Vol. 20, pp. 77-89, 1977