Reduction of remote impurity scattering in heavily modulation-doped gaAs and (GaIn)as quantum wells With AlAs/GaAs Type-II-superlattice barriers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1340-1342

  Friedland, Klaus Juergen ^a   Hey, R ^a   Kostial, H ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Electrical properties of layered structures; III V semiconductors; Low field transport and mobility; Molecular beam epitaxy

Indexed keywords

EID: 0040700422     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1340     Document Type: Article

References (9)

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