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Volumn 381, Issue 2-3, 1997, Pages

Strain relaxation induced 1-dimensional and 0-dimensional structures: Bi on Ge(001)

Author keywords

Bismuth; Germanium; Low index single crystal surfaces; Scanning tunneling microscopy; Surface stress; Surface structure, morphology, roughness and topography

Indexed keywords

ANNEALING; BISMUTH; DEPOSITION; MORPHOLOGY; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SURFACE TREATMENT;

EID: 0040687628     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00055-1     Document Type: Article
Times cited : (5)

References (15)
  • 2
    • 0027283185 scopus 로고
    • Ch. Park, R.Z. Bakhtizin, T. Hashizume, T. Sakurai, J. Vac. Sci. Technol., B 12 (1994) 2049, Jpn. J. Appl. Phys. 32 (1993) 528.
    • (1993) Jpn. J. Appl. Phys. , vol.32 , pp. 528
  • 15
    • 0039062405 scopus 로고    scopus 로고
    • Bi has a rhombohedral structure with a lattice constant of about 4.55 Å
    • Bi has a rhombohedral structure with a lattice constant of about 4.55 Å.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.