Simulation of silicon etching with KOH

Microelectronics Journal

Volumn 28, Issue 4 SPEC. ISS., 1997, Pages 509-517

  Camon, H ^a   Moktadir, Z ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040678580     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00067-5     Document Type: Article

References (13)

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11. A. Brahim-Bounab, Dissolution anisotrope du cristal de siticiom: modele tensoriel macroscopique et formes usinées experimentales, Ph.D. Thesis at Université de Franch-Comté, Besançon, France, 1992.
12. H. Camon, Z. Moktadir and M. Djafari-Rouhani, New trends in atomic scale simulation of wet chemical etching of silicon with KOH, E.MRS 1995 Spring Meeting, Symposium on Atomic Scale Characterization and Simulation of Materials and Processes, Strasbourg, France, 22-26 May 1995, J. Mater. Sci. Eng. B B37 (1996), 142-145.
13. H. Camon, D. Estève, M. Djafari-Rouhani and A.M. Gué, Simulated data of etching diagram (Si:KOH), in H. Reichl and A. Heuberger (eds), Micro System Technologies 94, VDE, Berlin, 1994, pp. 355-364.