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Volumn 8, Issue 5, 2002, Pages 205-212
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The effects of temperature jump on CVD modeling
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Author keywords
Gallium arsenide; Growth mechanisms; Modeling methods; Silicon carbide
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Indexed keywords
ADSORPTION;
CATALYSIS;
FILM GROWTH;
KINETIC ENERGY;
SEMICONDUCTING GALLIUM ARSENIDE;
SILICON CARBIDE;
SUBSTRATES;
THERMAL DIFFUSION;
THERMAL EFFECTS;
GAS-PHASE TEMPERATURE;
GROWTH MECHANISMS;
MODELING METHODS;
STAGNATION FLOW;
CHEMICAL VAPOR DEPOSITION;
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EID: 0040672015
PISSN: 09481907
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-3862(20020903)8:5<205::AID-CVDE205>3.0.CO;2-4 Document Type: Article |
Times cited : (5)
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References (15)
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