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Volumn 8, Issue 5, 2002, Pages 205-212

The effects of temperature jump on CVD modeling

Author keywords

Gallium arsenide; Growth mechanisms; Modeling methods; Silicon carbide

Indexed keywords

ADSORPTION; CATALYSIS; FILM GROWTH; KINETIC ENERGY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON CARBIDE; SUBSTRATES; THERMAL DIFFUSION; THERMAL EFFECTS;

EID: 0040672015     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3862(20020903)8:5<205::AID-CVDE205>3.0.CO;2-4     Document Type: Article
Times cited : (5)

References (15)
  • 5
    • 0003837274 scopus 로고
    • SPIN: A fortran program for modeling one-dimensional rotating-disk/stagnation-flow chemical vapor deposition reactors
    • Sandia National Laboratories
    • M. E. Coltrin, R J. Kee, G. H. Evans, E. Meeks, F. M. Rupley, J. F. Grear, SPIN: A Fortran Program for Modeling One-Dimensional Rotating-Disk/Stagnation-Flow Chemical Vapor Deposition Reactors, Technical Report SAND91-8003, Sandia National Laboratories 1991.
    • (1991) Technical Report SAND91-8003
    • Coltrin, M.E.1    Kee, R.J.2    Evans, G.H.3    Meeks, E.4    Rupley, F.M.5    Grear, J.F.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.