Hysteresis and self-sustained oscillations in space charge limited currents

Journal of Applied Physics

Volumn 83, Issue 6, 1998, Pages 2958-2964

  Gartstein, Yu N ^a   Ramesh, P S ^a  

^a XEROX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040624308     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367983     Document Type: Article

References (25)

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6. See other references in Ref. 5 and also L. Page and N. I. Adams, Jr., Phys. Rev. 76, 381 (1949) where another cylindrical electrode geometry was considered.
7. See, for example, S. H. Strogatz, Nonlinear Dynamics and Chaos (Addison-Wesley, Reading, MA, 1995).
8. In time-of-flight systems like ours, there is alwsys room for what could be called a "trivial" hysteresis: the current would be lagging the sufficiently quickly sweeping voltage. The subject of our concern is a "true" hysteresis observable when, following a small change of the applied voltage, the current measurement is made only after some waiting period, with all the transients gone.
9. Yu. P. Raizer, Gas Discharge Physics (Springer, Berlin, 1991).
10. E. Schöll, Nonequilibrium Phase Transitions in Semiconductors (Springer, Berlin, 1987).
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12. See, for example, C. Radehaus, R. Dohmen, H. Willebrand, and F. J. Niedernostheide, Phys. Rev. A 42, 7426 (1990); E. Ammelt, Y. A. Astrov, and H. G. Purwins, Phys. Rev. E 55, 6731 (1997), and references therein for a recent work on gas-discharge systems.
13. See, for example, C. Radehaus, R. Dohmen, H. Willebrand, and F. J. Niedernostheide, Phys. Rev. A 42, 7426 (1990); E. Ammelt, Y. A. Astrov, and H. G. Purwins, Phys. Rev. E 55, 6731 (1997), and references therein for a recent work on gas-discharge systems.
14. See, for example, A. Wacker and E. Schöll, Semicond. Sci. Technol. 9, 592 (1994); Y. Abe, ibid. 9, 603 (1994), and other papers in this issue dedicated to hot carriers in semiconductors.
15. See, for example, A. Wacker and E. Schöll, Semicond. Sci. Technol. 9, 592 (1994); Y. Abe, ibid. 9, 603 (1994), and other papers in this issue dedicated to hot carriers in semiconductors.
16. A parallel plane geometry is assumed so that only the coordinate x and the total velocity component v perpendicular to the electrodes are considered.
17. 0, the currents in Fig. 1 start to flow at slightly negative V.
18. 0 and changes of P corresponding to changes of the supply current j.
19. m there can lose its ability to characterize the distribution of potential, for which other means can instead be used.
20. E. M. Lishitz and L. P. Pitaevskii, Physical Kinetics (Pergamon, Oxford, 1981).
21. H. Haken, Synergetics (Springer, Berlin, 1977).
22. L. D. Landau and E. M. Lifshitz, Statistical Physics (Pergamon, Oxford, 1980), Part 1.
23. C. Hayashi, Nonlinear Oscillations in Physical Systems (Princeton University Press, Princeton, NJ, 1985).
24. If we start from the empty gap at some V in the region of the hysteresis, the system has been found to flow towards a stable node of the SLC regime. To get to the SCLC regime, one really needs to move slowly increasing the voltage as, e.g., in Fig. 2.
25. A. A. Andronov, A. A. Witt, and S. E. Chaikin, Theory of Oscillators (Dover, New York, 1966).