Kinetics of the initial stage in a first-order phase transformation in thin films

Physics of the Solid State

Volumn 39, Issue 1, 1997, Pages 104-108

  Detsik, V N ^a   Kukushkin, S A ^a   Osipov, A V ^a   Kaptelov, E Yu ^b   Pronin, I P ^b  

^a INSTITUTE OF PROBLEMS OF MECHANICAL ENGINEERING   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040601117     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1129809     Document Type: Article

References (31)

1. S. A. Kukushkin and A. V. Osipov, Progr. Surf. Sci. 51, 1 (1996).
2. F. S. Zeltser, T. K. Soboleva, and A. E. Filippov, Zh. Éksp. Teor. Fiz. 108, 356 (1995) [JETP 81, 193 (1995)].
3. F. S. Zeltser, T. K. Soboleva, and A. E. Filippov, Zh. Éksp. Teor. Fiz. 108, 356 (1995) [JETP 81, 193 (1995)].
4. V. I. Trofimov and V. A. Osadchenko, Growth and Morphology of Thin Films [in Russian], Energoatomizdat, Moscow (1993).
5. V. G. Boiko, H.-J. Mögel, V. M. Sysoev, and A. V. Chalyǐ, Usp. Fiz. Nauk 161, No. 2, 77 (1991) [Sov. Phys. Usp. 34, 141 (1991)].
6. V. G. Boiko, H.-J. Mögel, V. M. Sysoev, and A. V. Chalyǐ, Usp. Fiz. Nauk 161, No. 2, 77 (1991) [Sov. Phys. Usp. 34, 141 (1991)].
7. J. J. Kozak, Adv. Chem. Phys. 40, 229 (1979).
8. A. V. Osipov, J. Phys. D 28, 1670 (1995).
9. S. Stoyanov and D. Kashchiev, Curr. Top. Mater. Sci. 7, 69 (1981).
10. A. V. Osipov, Thin Solid Films 227, 111 (1993).
11. A. V. Osipov, Thin Solid Films 231, 173 (1995).
12. A. V. Osipov, Fiz. Tverd. Tela (St. Petersburg) 36, 1213 (1994) [Phys. Solid State 36, 664 (1994)].
13. A. V. Osipov, Fiz. Tverd. Tela (St. Petersburg) 36, 1213 (1994) [Phys. Solid State 36, 664 (1994)].
14. S. A. Kukushkin and A. V. Osipov, Fiz. Tverd. Tela (St. Petersburg) 38, 443 (1996) [Phys. Solid State 38, 244 (1996)].
15. S. A. Kukushkin and A. V. Osipov, Fiz. Tverd. Tela (St. Petersburg) 38, 443 (1996) [Phys. Solid State 38, 244 (1996)].
16. S. A. Kukushkin and A. V. Osipov, Phys. Rev. E 53, 4964 (1996).
17. C. K. Cwok and S. B. Desu, J. Mater. Res. 9, 1728 (1994).
18. Kiyoshi Okazaki, Ceramic Engineering for Dielectrics, Tokyo (1967); Energiya, Moscow (1976).
19. Kiyoshi Okazaki, Ceramic Engineering for Dielectrics, Tokyo (1967); Energiya, Moscow (1976).
20. A. H. Carim, B. A. Tuttle, D. H. Doughty, and S. L. Martinz, J. Am. Ceram. Soc. 74, 1455 (1991).
21. V. P. Afanas'ev, S. V. Bogachev, N. V. Zaitseva, E. Yu.Kaptelov, G. P. Kramar, A. A. Petrov, and I. I. Pronin, Zh. Tekh. Fiz. 66, 1831 (1996) [Tech. Phys. 41, 607 (1996)].
22. V. P. Afanas'ev, S. V. Bogachev, N. V. Zaitseva, E. Yu. Kaptelov, G. P. Kramar, A. A. Petrov, and I. I. Pronin, Zh. Tekh. Fiz. 66, 1831 (1996) [Tech. Phys. 41, 607 (1996)].
23. R. B. Khamankar, J.-Y. Kim, C. Sudhama, and J. C. Lee, Integrated Ferroelectrics 5, 169 (1994).
24. Fundamentals of Silicon Integrated Device Technology, Vol. 1, Oxidation, Diffusion, and Epitaxy, Ed. by R. M. Burger and R. P. Donovan, Prentice-Hall, Englewood Cliffs (1967); Mir, Moscow (1969).
25. Fundamentals of Silicon Integrated Device Technology, Vol. 1, Oxidation, Diffusion, and Epitaxy, Ed. by R. M. Burger and R. P. Donovan, Prentice-Hall, Englewood Cliffs (1967); Mir, Moscow (1969).
26. K. Nashimoto and S. Nakamura, Jpn. J. Appl. Phys. B 33, 5147 (1994).
27. M. E. Lines and A. M. Glass, Principles and Applications of Ferroelectrics and Related Materials, Clarendon, Oxford (1979); Mir, Moscow (1981).
28. M. E. Lines and A. M. Glass, Principles and Applications of Ferroelectrics and Related Materials, Clarendon, Oxford (1979); Mir, Moscow (1981).
29. R. C. Neville and C. A. Mead, J. Appl. Phys. 43, 4657 (1972).
30. N. K. Yushin and A. V. Sotnikov, Fiz. Tverd. Tela (Leningrad) 22, 2272 (1980) [Sov. Phys. Solid State 22, 1615 (1980)].
31. N. K. Yushin and A. V. Sotnikov, Fiz. Tverd. Tela (Leningrad) 22, 2272 (1980) [Sov. Phys. Solid State 22, 1615 (1980)].