Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm

Semiconductors

Volumn 31, Issue 11, 1997, Pages 1200-1203

  Danilova, T N ^a   Danilova, A P ^a   Ershov, O G ^a   Imenkov, A N ^a   Stepanov, M V ^a   Sherstnev, V V ^a   Yakovlev, Yu P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040600593     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187294     Document Type: Article

References (14)

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