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Volumn 31, Issue 5, 1997, Pages 452-454

On the relaxational characteristics and stability of a Si:H films grown at high temperatures

(4) Kurova, I A a Ormont, N N a Golikova, O A b Kudoyarova, V Kh b

a MOSCOW STATE UNIVERSITY (Russian Federation)

b IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040600588 PISSN: 10637826 EISSN: None Source Type: Journal
DOI: 10.1134/1.1187193 Document Type: Article

Times cited : (2)

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